TLP350, TLP 350
https://blogger.googleusercontent.com/img/b/R29vZ2xl/AVvXsEhUf_YkuzuMT-fVZ-NlN9pgL6RrgE2EpN9JE2E7vj2LrVpl7YzdWLOyi1I786uzbhqxhjLBupgMPiknyPcm2GZsPrDQYj79D0djqR9mgs90lRaT8tgkQNXcBLv8jcB6JZC7qeQjd700wnc/s72-c/TLP350%252C+TLP+350.jpg
30.000 đ
(Số lượng: >=5 Giá : 0.000 đ)
- Hãng sản xuất : Chính Hãng
- Mã sản phẩm : TLP350, TLP 350
- Hình thức : Mới- Hãng sản xuất : Chính Hãng
- Mã sản phẩm : TLP350, TLP 350
- Tình trạng: Còn Hàng
- Thông số kỹ thuật: TLP350, TLP 350
The TOSHIBA TLP350F consists of a GaAℓAs light-emitting diode and an integrated photodetector. This unit is an 8-lead DIP package. The TLP350F is suitable for gate driving IGBTs or power MOSFETs. Absolute maximum ratings and electrical characteristics are the same as TLP350 technical datasheet. • Peak output current: IO = ±2.5A (max) • Guaranteed performance over temperature: −40 to 100°C • Supply current: ICC = 2 mA (max) • Power supply voltage: VCC = 15 to 30 V • Threshold input current : IFLH = 5 mA (max) • Switching time (tpLH/tpHL) : 500 ns (max) • Common mode transient immunity: 15 kV/μs • Isolation voltage: 3750 Vrms • UL Recognized : UL1577, File No.E67349 • Option(D4) VDE Approved : DIN EN 60747-5-2 Maximum Operating Insulation Voltage : 1140 VPK Highest Permissible Over Voltage : 6000 VPK (Note): When an EN60747-5-2 approved type is needed, Please designate “Option(D4)”
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