FF600R12KF4 IGBT infineon

FF600R12KF4 IGBT infineon

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- Hãng sản xuất : Chính Hãng 
- Mã sản phẩm : FF600R12KF4 IGBT infineon

- Hình thức : Mới và Cũ
- Tình trạng: Liên Hệ
- Thông số kỹ thuật:  Höchstzulässige Werte / Maximum rated values Elektrische Eigenschaften / Electrical properties Kollektor-Emitter-Sperrspannung collector-emitter voltage VCES 1200 V Kollektor-Dauergleichstrom DC-collector current IC 600 A Periodischer Kollektor Spitzenstrom repetitive peak collctor current tp=1 ms ICRM 1200 A Gesamt-Verlustleistung total power dissipation tC=25°C, Transistor /transistor Ptot 3900 W Gate-Emitter-Spitzenspannung gate-emitter peak voltage VGE ± 20 V Dauergleichstrom DC forward current IF 600 A Periodischer Spitzenstrom repetitive peak forw. current tp=1ms IFRM 1200 A Isolations-Prüfspannung insulation test voltage RMS, f=50 Hz, t= 1 min. VISOL 2,5 kV Charakteristische Werte / Characteristic values: Transistor min. typ. max. Kollektor-Emitter Sättigungsspannung collector-emitter saturation voltage iC=600A, vGE=15V, tvj=25°C vCE sat - 2,7 3,2 V iC=600A, vGE=15V, tvj=125°C - 3,3 3,9 V Gate-Schwellenspannung gate threshold voltage iC=24mA, vCE=vGE, tvj=25°C vGE(th) 4,5 5,5 6,5 V Eingangskapazität input capacity fO=1MHz,tvj=25°C,vCE=25V, vGE=0V Cies - 45 - nF Kollektor-Emitter Reststrom collector-emitter cut-off current vCE=1200V, vGE=0V, tvj=25°C iCES - 8 - mA vCE=1200V, vGE=0V, tvj=125°C - 50 - mA Gate-Emitter Reststrom gate leakage current vCE=0V, vGE=20V, tvj=25°C iGES - - 400 nA Emitter-Gate Reststrom gate leakage current vCE=0V, vEG=20V, tvj=25°C iEGS - - 400 nA Einschaltzeit (induktive Last) turn-on time (inductive load) iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj= 25°C ton - 0,7 - µs iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj=125°C - 0,8 - µs Speicherzeit (induktive Last) storage time (inductive load) iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj= 25°C ts - 0,9 - µs iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj=125°C - 1,0 - µs Fallzeit (induktive Last) fall time (inductive load) iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj= 25°C t f - 0,10 - µs iC=600A,vCE=600V,vL=±15V,RG=1,6 ,tvj=125°C - 0,15 - µs Einschaltverlustenergie pro puls turn-on energie per pulse iC=600A, vCE=600V, Ls=70nH Eon vL=±15V, RG=1,6 , tvj=125°C - 90 - mWs Abschaltverlustenergie pro Puls turn-off energie loss per pulse iC=600A, vCE=600V, Ls=70nH Eoff vL=±15V, RG=1,6 , tvj=125°C - 90

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